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Chalcogenide phase-change materials (PCMs) offer a promising approach to programmable photonics thanks to their nonvolatile, reversible phase transitions and high refractive index contrast. However, conventional designs are limited by global phase control over entire PCM thin films between fully amorphous and fully crystalline states, which restricts device functionality and confines design flexibility and programmability. In this work, we present a novel approach that leverages pixel-level control of PCM in inverse-designed photonic devices, enabling highly reconfigurable, multi-functional operations. We integrate low-loss Sb2Se3 onto a multi-mode interferometer and achieve precise, localized phase manipulation through direct laser writing. This technique allows for flexible programming of the photonic device by adjusting the PCM phase pattern rather than relying on global phase states, thereby enhancing device adaptability. As a proof of concept, we programmed the device as a wavelength-division multiplexer and subsequently reconfigured it into a mode-division multiplexer. Our results underscore the potential of combining inverse design with pixel-wise tuning for next-generation programmable phase-change photonic systems. 

The integration of computing with memory is essential for distributed, massively parallel, and adaptive architectures such as neural networks in artificial intelligence (AI). Accelerating AI can be achieved through photonic computing, but it requires nonvolatile photonic memory capable of rapid updates during on-chip training sessions or when new information becomes available during deployment. Phase-change materials (PCMs) are promising for providing compact, nonvolatile optical weighting; however, they face limitations in terms of bit precision, programming speed, and cycling endurance. Here, we propose a novel photonic memory cell that merges nonvolatile photonic weighting using PCMs with high-speed, volatile tuning enabled by an integrated PN junction. Our experiments demonstrate that the same PN modulator, fabricated via a foundry-compatible process, can achieve dual functionality. It supports coarse programmability for setting initial optical weights and facilitates high-speed fine-tuning to adjust these weights dynamically. The result shows a 400-fold increase in volatile tuning speed and a 10,000-fold enhancement in efficiency. This multifunctional photonic memory with volatile and nonvolatile capabilities could significantly advance the performance and versatility of photonic memory cells, providing robust solutions for dynamic computing environments. 

Optical phase-change materials have enabled nonvolatile programmability in integrated photonic circuits by leveraging a reversible phase transition between amorphous and crystalline states. To control these materials in a scalable manner on-chip, heating the waveguide itself via electrical currents is an attractive option which has been recently explored using various approaches. Here, we compare the heating efficiency, fabrication variability, and endurance of two promising heater designs which can be easily integrated into silicon waveguides—a resistive microheater using n-doped silicon and one using a silicon p-type/intrinsic/n-type (PIN) junction. Raman thermometry is used to characterize the heating efficiencies of these microheaters, showing that both devices can achieve similar peak temperatures but revealing damage in the PIN devices. Subsequent endurance testing and characterization of both device types provide further insights into the reliability and potential damage mechanisms that can arise in electrically programmable phase-change photonic devices. 

Bragg gratings offer high-performance filtering and routing of light on-chip through a periodic modulation of a waveguide’s effective refractive index. Here, we model and experimentally demonstrate the use of Sb₂Se₃, a nonvolatile and transparent phase-change material, to tune the resonance conditions in two devices which leverage periodic Bragg gratings—a stopband filter and Fabry-Perot cavity. Through simulations, we show that similar refractive indices between silicon and amorphous Sb₂Se₃can be used to induce broadband transparency, while the crystalline state can enhance the index contrast in these Bragg devices. Our experimental results show the promise and limitations of this design approach and highlight specific fabrication challenges which need to be addressed in future implementations. 

Abstract Advancements in nanofabrication processes have propelled nonvolatile phase change materials (PCMs) beyond storage‐class applications. They are now making headway in fields such as photonic integrated circuits (PIC), free‐space optics, and plasmonics. This shift is owed to their distinct electrical, optical, and thermal properties between their different atomic structures, which can be reversibly switched through thermal stimuli. However, the reliability of PCM‐based optical components is not yet on par with that of storage‐class devices. This is in part due to the challenges in maintaining a uniform temperature distribution across the PCM volume during phase transformation, which is essential to mitigate stress and element segregation as the device size exceeds a few micrometers. Understanding thermal transport in PCM‐based devices is thus crucial as it dictates not only the durability but also the performance and power consumption of these devices. This article reviews recent advances in the development of PCM‐based photonic devices from a thermal transport perspective and explores potential avenues to enhance device reliability. The aim is to provide insights into how PCM‐based technologies can evolve beyond storage‐class applications, maintain their functionality, and achieve longer lifetimes. 

Abstract Chalcogenide optical phase change materials (PCMs) have garnered significant interest for their growing applications in programmable photonics, optical analog computing, active metasurfaces, and beyond. Limited endurance or cycling lifetime is however increasingly becoming a bottleneck toward their practical deployment for these applications. To address this issue, a systematic study elucidating the cycling failure mechanisms of Ge₂Sb₂Se₄Te (GSST) is performed, a common optical PCM tailored for infrared photonic applications, in an electrothermal switching configuration commensurate with their applications in on‐chip photonic devices. Further a set of design rules building on insights into the failure mechanisms is proposed, and successfully implemented them to boost the endurance of the Ge₂Sb₂Se₄Te (GSST) device to over 67 000 cycles.